Bütün, S.Gökkavas, M.Yu, H.Özbay, Ekmel2016-02-082016-02-0820060003-6951http://hdl.handle.net/11693/23734Metal-semiconductor-metal photodetectors on semi-insulating GaN templates were demonstrated and compared with photodetectors fabricated on regular GaN templates. Samples were grown on a metal organic chemical vapor deposition system. Devices on semi-insulating template exhibited a dark current density of 1.96 × 10-10 A/cm2 at 50 V bias, which is four orders of magnitude lower compared with devices on regular template. Device responsivities were 101.80 and 88.63 A/W at 50 V bias for 360 nm ultraviolet illumination for semi-insulating and regular templates, respectively. Incident power as low as 3 pW was detectable using the devices that were fabricated on the semi-insulating template. © 2006 American Institute of Physics.EnglishChemical vapor depositionCurrent densityElectric currentsGallium nitridePhotodetectorsSemiconductor materialsSemiconductor metal boundariesUltraviolet radiationDark currentsMetal-semiconductor-metal photodetectorsRegular templateSemi insulating GaNPhotodiodesArticle10.1063/1.22347411077-3118