Sheremet, V.Gheshlaghi, N.Sözen, M.Elçi, M.Sheremet, N.Aydınlı, A.Altuntaş, I.Ding, K.Avrutin, V.Özgür, Ü.Morkoç, H.2019-02-212019-02-2120180749-6036http://hdl.handle.net/11693/49954We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step-graded electron injectors. Insertion of an InGaN stress compensation layer between n-GaN and the step graded electron injector provides, among others, strain reduction in the MQW region and as a result improves epitaxial quality that can be observed by 15-fold decrease of V-pit density. We observed more uniform distribution of In between quantum wells in MQW region from results of electro- and photoluminescence measurement. These structural improvements lead to increasing of radiant intensity by a factor of 1.7-2.0 and enhancement of LED efficiency by 40%.EnglishInGaN/GaNLight-emitting diodeStep-graded electron injectorStress compensation layerArticle10.1016/j.spmi.2018.02.002