Onaran, E.Onbasli, M. C.Yesilyurt, A.Yu, H. Y.Nayfeh, A. M.Okyay, Ali Kemal2016-02-082016-02-08201210944087http://hdl.handle.net/11693/21540Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of ∼10 mA/cm2 and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage. © 2012 Optical Society of America.EnglishEpitaxial filmsEpitaxial growthLeakage currentsMonolithic integrated circuitsSingle crystalsApplied voltagesEpitaxial techniquesEpitaxially grownGrowth techniquesHigh-quality filmsMonolithic integrationMultiquantum wellsNear InfraredP-i-n photodetectorsResponsivityReverse leakage currentSilicon GermaniumSilicon substratesSpectral responsivityVLSI technologyPhotodetectorsgermaniumsiliconarticlechemistryequipmentequipment designinfrared radiationinstrumentationnear infrared spectroscopyphotometryradiation exposureEquipment DesignEquipment Failure AnalysisGermaniumInfrared RaysPhotometrySiliconSpectroscopy, Near-InfraredArticle10.1364/OE.20.007608