Atar, F. B.Yesilyurt, A.Onbasli, M. C.Hanoglu, O.Okyay, Ali Kemal2016-02-082016-02-082011-09-180741-3106http://hdl.handle.net/11693/21730The temperature dependence of current is investigated experimentally for silicon-germanium (Si-Ge) multi-quantum-well p-i-n devices on Si substrates as uncooled bolometer active layers. Temperature coefficient of resistance values as high as-5.8%/K are recorded. This value is considerably higher than that of even commercial bolometer materials in addition to being well above the previous efforts based on CMOS compatible materials.EnglishBolometersGermaniumQuantum wellsSiliconArticle10.1109/LED.2011.2164390