Khan, T. M.Ghobadi, A.Celik, O.Caglayan, C.Bıyıklı, NecmiOkyay, Ali KemalTopalli, K.Sertel, K.2018-04-122018-04-12201697814673848582162-2027http://hdl.handle.net/11693/37729We present non-contact characterization of GaAs Schottky contacts in the 140-220 GHz band. The non-contact probing technique utilizes planar on-chip antennas that are monolithically integrated with the coplanar waveguide environment housing the Schottky diode under test. The diode contact is fabricated through a 6 mask lithographic process with a 5 μm deep-trench under the contact to minimize parasitics and extend operation into the THz band. A quasi-optical link between the VNA ports and on-chip probe antennas enables efficient signal coupling into the test device. The non-contact probe station is calibrated using on-chip quick-offset-short method and the effectiveness of this approach is demonstrated for integrated diodes for under various bias conditions.EnglishAntennasCoplanar waveguidesDiodesNondestructive examinationProbesSchottky barrier diodesBias conditionsIntegrated diodesLithographic processMonolithically integratedNon-contact probeProbing techniquesSchottky contactsSchottky diodesTerahertz wavesConference Paper