Abedinpour, S. H.Polini, M.MacDonald, A. H.Tanatar, BilalTosi, M. P.Vignale, G.2016-02-082016-02-0820070031-9007http://hdl.handle.net/11693/23332The pseudospin degree of freedom in a semiconductor bilayer gives rise to a collective mode analogous to the ferromagnetic-resonance mode of a ferromagnet. We present a many-body theory of the dependence of the energy and the damping of this mode on layer separation d. Based on these results, we discuss the possibilities of realizing transport-current driven pseudospin-transfer oscillators in semiconductors, and of using the pseudospin-transfer effect as an experimental probe of intersubband plasmons.EnglishElectron transport propertiesFerromagnetic materialsMultilayersResonanceSemiconductor materialsIntersubband plasmonsPseudospinPseudospin-transfer oscillatorsSemiconductor bilayerSpin dynamicsArticle10.1103/PhysRevLett.99.2068021079-7114