Butun, B.Tut, T.Ulker, E.Yelboga, T.Özbay, Ekmel2016-02-082016-02-0820080003-6951http://hdl.handle.net/11693/23222We report high performance visible-blind GaN-based p-i-n photodetectors grown by metal-organic chemical vapor deposition on c -plane sapphire substrates. The dark current of the 200 μm diameter devices was measured to be lower than 20 pA for bias voltages up to 5 V. The breakdown voltages were higher than 120 V. The responsivity of the photodetectors was ∼0.23 AW at 356 nm under 5 V bias. The ultraviolet-visible rejection ratio was 6.7× 103 for wavelengths longer than 400 nm.EnglishArticle10.1063/1.28376451077-3118