Schwindt, R. S.Kumar, V.Aktaş, OzanLee, J.-W.Adesida, I.2016-02-082016-02-082004-101550-8781http://hdl.handle.net/11693/27439Date of Conference: 24-27 Oct. 2004Conference name: IEEE Compound Semiconductor Integrated Circuit Symposium, 2004The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz at room temperature. The noise figure at 9.5 GHz increased from 2.5 dB at 43°C to 5.0 dB at 150°C. © 2004 IEEE.EnglishAmplifierGallium nitrideGaNHEMTLow noiseMMICSiCWide bandgapLow noise amplifier (LNA)Ohmic metalSpiral inductorsWide bandgapAmplifiers (electronic)Electron mobilityGallium nitrideMonolithic microwave integrated circuitsRapid thermal annealingSemiconducting aluminum compoundsSilicon carbideTransmission line theoryHigh electron mobility transistorsConference Paper10.1109/CSICS.2004.1392536