Jang L.-W.Ju J.-W.Jeon J.-W.Jeon, D.-W.Choi J.-H.Lee, S.-J.Jeon, S.-R.Baek J.-H.Sarı, EmreDemir, Hilmi VolkanYoon H.-D.Hwang, S.-M.Lee I.-H.2016-02-082016-02-0820110277-786Xhttp://hdl.handle.net/11693/28405Conference name: Proceedings of SPIE, Quantum Sensing and Nanophotonic Devices VIIIDate of Conference: 23–27 January 2011We investigated the surface plasmon coupling behavior in InGaN/GaN multiple quantum wells at 460 nm by employing Ag nanostructures on the top of a roughened p-type GaN. After the growth of a blue light emitting diode structure, the p-GaN layer was roughened by inductive coupled plasma etching and the Ag nanostructures were formed on it. This structure showed a drastic enhancement in photoluminescence and electroluminescence intensity and the degree of enhancement was found to depend on the morphology of Ag nanostructures. From the time-resolved photoluminescence measurement a faster decay rate for the Ag-coated structure was observed. The calculated Purcell enhancement factor indicated that the improved luminescence intensity was attributed to the energy transfer from electron-hole pair recombination in the quantum well to electron vibrations of surface plasmon at the Ag-coated surface of the roughened p-GaN. © 2011 SPIE.EnglishBlue light emitting diodesDecay rateElectroluminescence intensityElectron hole pairsElectron vibrationsEnhancement factorInductive coupled plasmaInGaN/GaNLuminescence intensityMultiple quantum wellsOptical characteristicsP-type GaNQuantum wellSurface plasmon couplingSurface plasmonsTime-resolved photoluminescenceDecay (organic)Energy transferGallium nitrideLightLight emissionLight emitting diodesNanophotonicsNanostructuresPhotoluminescencePlasma etchingPlasmonsSemiconductor quantum wellsWater analysisSilverConference Paper10.1117/12.869465