Cetđn, S.Sağlam, S.Ozcelđk, S.Özbay, Ekmel2016-02-082016-02-08201413039709http://hdl.handle.net/11693/26616Five period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer, which was deposited on a c-plane (0001)-faced sapphire substrate. The effect of growth conditions, such as the well growth time, growth temperatures, and indium flow rate on the properties of MQW structures were investigated by using high resolution X-ray diffraction and room temperature photoluminescence. By increasing growth temperature, the emission wavelengths showed a blue-shift while it red-shifted via an increase in the indium flow rate. The emission wavelength can be tuned by way of changing the well growth time of the samples. ©2014 Gazi University Eti Mahallesi. All rights reserved.EnglishHigh resolution X-ray diffractionInGaNLight emitting diodeMetalorganic chemical vapor depositionMulti quantum wellPhotoluminescenceFlow rateGrowth temperatureIndiumLight emitting diodesMetallorganic chemical vapor depositionPhotoluminescenceSapphireSemiconducting aluminum compoundsX ray diffractionX ray diffraction analysisEmission wavelengthGrowth conditionsHigh resolution X ray diffractionInGaNLow-pressure MOCVDMulti quantum wellsRoom-temperature photoluminescenceSapphire substratesSemiconductor quantum wellsArticle