Tanatar, Bilal2016-02-082016-02-0819991300-0101http://hdl.handle.net/11693/25153We study the many-body effects described by the local-field corrections on the mobility of quasi-one dimensional electron systems. The low temperature mobility due to remote-impurity doping and interface-roughness scattering is calculated within the relaxation time approximation. We find that correlation effects significantly reduce the mobility at low density.EnglishApproximation theoryCarrier mobilityElectron scatteringSemiconducting gallium arsenideSemiconductor dopingSurface roughnessRemote-impurity dopingSemiconductor quantum wiresArticle