Sayan, S.Bartynski, R.A.Robertson J.Suehle, J. S.Vogel, E.Nguyen, N. V.Ehrstein, J.Kopanski, J. J.Süzer, ŞefikHoll, M. B.Garfunkel, E.2016-02-082016-02-082004http://hdl.handle.net/11693/27442Date of Conference: 10-12 May 2004Conference Name: International Symposium on Advanced Short-time Thermal Processing for Si-based CMOS Devices IIWe have studied the HfO 2/Hf and HfO 2/Pt systems by photoemission and inverse photoemission spectroscopies. It is found that the "effective workfunction" of metals in multilayer structures are different than their vacuum workfunctions and are modified by their interface dipoles at the metal/high-k interface. The effective workfunction of Hf is 4.4 eV whereas that of Pt is 5.3 eV, within the range of acceptable values for PMOS and NMOS respectively.EnglishBand alignmentsDielectric stacksPhotoemission spectroscopyWork functionsCMOS integrated circuitsElectric insulatorsFermi levelGates (transistor)Hafnium compoundsMultilayersPhotoemissionThermodynamic stabilityThreshold voltageDielectric materialsConference Paper