Okyay, Ali KemalAygun, Levent E.Oruç, Feyza B.2016-02-082016-02-0820130277-786Xhttp://hdl.handle.net/11693/28012Conference name: Proceedings of SPIE, Oxide-based Materials and Devices IVIn order to demonstrate tunable absorption characteristics of ZnO, photodetection properties of ZnO based thin-film transistors are investigated. By controlling the occupancy of the trap states, the optical absorption coefficient of ZnO in the visible light spectrum is actively tuned with gate bias. An order of magnitude change of absorption coefficient is achieved. An optical modulator is proposed exploiting such tunable absorption mechanism. © 2013 SPIE.EnglishAtomic layer depositionMetal oxidesOptical modulatorThin film transistorTunable absorberZnOAbsorption characteristicsAbsorption co-efficientAbsorption mechanismsMetal oxidesOptical absorption coefficientsTunable absorberVisible wavelengthsZnOAtomic layer depositionLight modulatorsThin film transistorsZinc oxideConference Paper10.1117/12.2005558