Akça, İmran B.Dana, AykutluAydınlı, AtillaRossetti, M.Li, L.Fiore, A.Dağlı, N.2015-07-282015-07-282008-03http://hdl.handle.net/11693/11655Abstract Optical properties of multilayer InAs quantum dot waveguides, grown by molecular beam epitaxy, have been studied under applied electric field. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs. Electro-absorption measurements at 1300 nm showed increased absorption with applied field accompanied with red shift of the spectra. Spectral shifts of up to 21% under 18 Volt bias was observed at 1320 nm. (C) 2008 Optical Society of America.EnglishWell structuresCoefficientsBandArticle10.1364/OE.16.0034391094-4087