Arslan, E.Bütün, S.Şafak, Y.Uslu, H.Tascioglu I.Altindal, S.Özbay, Ekmel2016-02-082016-02-0820100026-2714http://hdl.handle.net/11693/28416The forward and reverse bias I-V, C-V, and G/ω-V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al 0.22Ga 0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiN x insulator layer were measured at room temperature in order to investigate the effects of the insulator layer (SiN x) on the main electrical parameters such as the ideality factor (n), zero-bias barrier height ( B0), series resistance (R s), interface-state density (N ss). The energy density distribution profiles of the N ss were obtained from the forward bias I-V characteristics by taking into account the voltage dependence of the effective barrier height ( e) and ideality factor (n V) of devices. In addition, the N ss as a function of E c-E ss was determined from the low-high frequency capacitance methods. It was found that the values of N ss and R s in SBD HEMTs decreases with increasing insulator layer thickness.EnglishAlGaN/AlN/GaNBarrier heightsElectrical characterizationElectrical parameterEnergy density distributionsForward biasHeterostructuresHigh electron mobilityIdeality factorsInsulator layerInterface state densityIV characteristicsLow-highMIS structureReverse biasRoom temperatureSeries resistancesVoltage dependenceZero-biasGalliumHeterojunctionsHigh electron mobility transistorsSilicon nitrideSchottky barrier diodesArticle10.1016/j.microrel.2010.08.022