Taş, MuratTanatar, Bilal2016-02-082016-02-0820071862-6351http://hdl.handle.net/11693/26979Date of Conference: 30 July-4 August 2006Conference Name: International Conference on Superlattices, Nano-Structures and Nano-Devices, ICSNN 2006We theoretically study the energy relaxation of hot electrons via LO-phonon emission in two-dimensional GaN systems. We employ a model in which electrons and the lattice are in equilibrium separately, and the effective electron temperature is much larger than the lattice temperature. We include the dynamical screening of electrons, electron-phonon interactions reduced phonon self-energy correction, the hot-phonon, and the finite-size effects. The power loss to acoustic phonons is also considered.EnglishAcoustic phononsDynamical screeningEnergy relaxationsFinite-size effectsLattice temperaturesNano-devicesPhonon emissionsPower lossesSelf-energy correctionsElectron-phonon interactionsGallium alloysGallium nitrideNanostructuresSemiconducting galliumTwo dimensionalTheoretical investigations on the energy relaxation in two-dimensional GaN systemsConference Paper10.1002/pssc.200673335