Bıyıklı, NecmiKimukin, I.Butun, B.Aytür, O.Özbay, Ekmel2016-02-082016-02-0820041077-260Xhttp://hdl.handle.net/11693/24264High-performance vertically illuminated Schottky photodiodes with indium-tin-oxide (ITO) Schottky layers were designed, fabricated, and tested. Ternary and quarternary III-V material systems (AlGaN-GaN, AlGaAs-GaAs, InAlGaAs-InP, and InGaAsP-InP) were utilized for detection in the ultraviolet (UV) (λ < 400 nm), near-IR (λ ∼ 850 nm), and IR (λ ∼ 1550 nm) spectrum. The material properties of thin ITO films were characterized. Using resonant-cavity-enhanced (RCE) detector structures, improved efficiency performance was achieved. Current-voltage, spectral responsivity, and high-speed measurements were carried out on the fabricated ITO-Schottky devices. The device performances obtained with different material systems are compared.EnglishHeterostructureHigh performanceIII-V alloysIndium-tin-oxide (ITO)PhotodiodeResonant cavitySchottkyBandwidthCarrier communicationElectric conductivityElectric currentsFabricationHeterojunctionsIndium compoundsInfrared spectrographsPhotodetectorsSchottky barrier diodesSemiconductor materialsSpectrum analysisUltraviolet detectorsHigh performanceIII-V alloysIndium-tin-oxide (ITO)Resonant cavityPhotodiodesArticle10.1109/JSTQE.2004.833977