Yu, H.-Y.Kobayashi, M.Jung, W. S.Okyay, Ali KemalNishi, Y.Saraswat, K. C.2016-02-082016-02-0820090163-1918http://hdl.handle.net/11693/28653Date of Conference: 7-9 December 2009Conference Name: 2009 IEEE International Electron Devices Meeting, IEDM 2009We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) technique. Until now low source/drain series resistance in Ge n-MOSFETs has been a highly challenging problem. Source and drain are formed by implant-free, in-situ doping process for the purpose of very low series resistance and abrupt and shallow n+/p junctions. The novel n-MOSFETs show among the highest electron mobility reported on (100) Ge to-date. Furthermore, these devices provide an excellent Ion/Ioff ratio(4× 103) with very high Ion of 3.23μA/μm. These results show promise towards monolithic integration of Ge MOSFETs with Si CMOS VLSI platform.EnglishHeteroepitaxyHigh quality single crystalsIn-situ dopingMonolithic integrationnMOSFETsRaised source/drainSeries resistancesSi CMOSSource and drainsSource/drain series resistancesElectric resistanceElectron devicesElectron mobilityEpitaxial growthGermaniumMonolithic integrated circuitsSemiconducting silicon compoundsSiliconSingle crystalsMOSFET devicesConference Paper10.1109/IEDM.2009.5424245