Atomic Layer Deposition for Vertically Integrated ZnO Thin Film Transistors: Toward 3D High Packing Density Thin Film Electronics

Sisman, Z.Bolat, S.Okyay, Ali Kemal2018-04-122018-04-1220171862-6351http://hdl.handle.net/11693/36395We report on the first demonstration of the atomic layer deposition (ALD) based three dimensional (3D) integrated ZnO thin film transistors (TFTs) on rigid substrates. Devices exhibit high on-off ratio (∼106) and high effective mobility (∼11.8 cm2 V−1 s−1). It has also been demonstrated that the steps of fabrication result in readily stable electrical characteristics in TFTs, eliminating the need for post-production steps. These results mark the potential of our fabrication method for the semiconducting metal oxide-based vertical-integrated circuits requiring high packing density and high functionality. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimEnglish3D integrationAtomic layer depositionThin film transistorsAtomic layer depositionAtomsDepositionMetallic filmsMetalsOptical filmsThin film transistorsThin filmsZinc oxide3-D integrationEffective mobilitiesElectrical characteristicFabrication methodHigh packing densitySemi-conducting metal oxidesThin film electronicsThreedimensional (3-d)Thin film circuitsAtomic Layer Deposition for Vertically Integrated ZnO Thin Film Transistors: Toward 3D High Packing Density Thin Film ElectronicsArticle10.1002/pssc.201700128