Tokel, OnurTurnalı, AhmetDeminskyi, Petroİlday, Serimİlday, F. Ömer2019-02-212019-02-2120189781557528209http://hdl.handle.net/11693/50481Conference name: Conference on Lasers and Electro-Optics/Pacific Rim 2018Date of Conference: 29 July–3 August 2018Recently, we have showed a direct laser writing method that enables the first subsurface modifications and functional devices created deep inside silicon. Here, we extend the technique demonstrating the first controlled subsurface nanostructures in GaAs.EnglishLaser writing of nanostructures deep inside Gallium Arsenide (GaAs)Conference Paper10.1364/CLEOPR.2018.W1E.2