Tanrikulu, M. Y.Rasouli, H. R.Ghaffari, M.Topalli K.Okyay, Ali Kemal2018-04-122018-04-1220160734-2101http://hdl.handle.net/11693/37319This paper demonstrates the possible usage of TiOx thin films synthesized by atomic layer deposition as a microbolometer active material. Thin film electrical resistance is investigated as a function of thermal annealing. It is found that the temperature coefficient of resistance values can be controlled by coating/annealing processes, and the value as high as -9%/K near room temperature is obtained. The noise properties of TiOx films are characterized. It is shown that TiOx films grown by atomic layer deposition technique could have a significant potential to be used as a new active material for microbolometer-based applications. © 2016 American Vacuum Society.EnglishArticle10.1116/1.4947120