Onbasli, M.C.Yesilyurt, AlperYu H.Y.Nayfeh, A.M.Okyay, Ali Kemal2016-02-082016-02-082010http://hdl.handle.net/11693/28434Date of Conference: 7-11 Nov. 2010Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current. ©2010 IEEE.EnglishEpitaxial techniquesHigh-quality filmsLow-dislocation densityLow-leakage currentLower costMultiquantum wellsNanostructuralQuantum wellSilicon germaniumTEMXPSGermaniumSemiconductor quantum wellsConference Paper10.1109/PHOTONICS.2010.5698995