Sandhu, A.Kurosawa, K.Dede, M.Oral, A.2016-02-082016-02-0820040021-4922http://hdl.handle.net/11693/24329Bismuth nano-Hall sensors with dimensions ∼50nm × 50 nm were fabricated using a combination of optical lithography and focused ion beam milling. The Hall coefficient, series resistance and optimum magnetic field sensitivity of the sensors were 4 × 10-4 Ω/G, 9.1kΩ and 0.8G/√Hz, respectively. A 50nm nano-Bi Hall sensor was installed into a room temperature scanning Hall probe microscope and successfully used for directly imaging ferromagnetic domains of low coercivity garnet thin films.EnglishHall sensorsMagnetic domainsNanomagneticsScanning hall probe microscopyCoercive forceFerromagnetismIon beamsLithographyMagnetic domainsMagnetic field effectsPhotoresistsScanning tunneling microscopyHall sensorsScanning Hall probe microscopySensorsArticle