Akça, Imran B.Dana, AykutluAydınlı, AtillaRossetti, M.Li L.Fiore, A.Dagli, N.2016-02-082016-02-0820072162-2701http://hdl.handle.net/11693/27132Conference name: Frontiers in Optics 2007Date of Conference: 16–20 September 2007Electric field dependence of optical modulation in self assembled InAs quantum dot waveguides have been studied at 1300 and 1500 nm. Electro-absorption and electro-optic coefficients of these waveguides have been obtained at both wavelengths. © 2007 Optical Society of America.EnglishElectric fieldsIndium arsenideModulationSemiconductor quantum dotsElectric field dependenceElectro optic coefficientElectro-absorptionInAs quantum dotsSelf-assembledWaveguidesModulation of multilayer InAs quantum dot waveguides under applied electric fieldConference Paper10.1364/FIO.2007.FMD3