Özbay, EkmelKimukin, İ.Bıyıklı, NecmiAytür, O.Gökkavas, M.Ulu, G.Ünlü, M. S.Mirin, R. P.Bertness, K. A.Christensen, D. H.2016-02-082016-02-081999-02-220003-6951http://hdl.handle.net/11693/25164We report GaAs/AlGaAs-based high-speed, high-efficiency, resonant cavity enhanced p-i-n photodiodes. The devices were fabricated by using a microwave-compatible fabrication process. By using a postprocess recess etch, we tuned the resonance wavelength from 835 to 795 nm while keeping the peak efficiencies above 90%. The maximum quantum efficiency was 92% at a resonance wavelength of 823 nm. The photodiode had an experimental setup-limited temporal response of 12 ps. When the system response is deconvolved, the 3 dB bandwidth corresponds to 50 GHz, which is in good agreement with our theoretical calculations.EnglishArticle10.1063/1.123485