Serpengüzel, A.Darici, Y.2016-02-082016-02-0819991-55752-570-6http://hdl.handle.net/11693/25300Microcavity effects on the photoluminescence (PL) of porous Si has already been reported. Recently, we have observed visible and near infrared (IR) PL from hydrogenated amorphous Si nitride (a-SiNx:H) grown by low temperature PECVD. We have also reported the enhancement and inhibition of PL in an a-SiNx:H microcavity formed with metallic mirrors. The a-SiNx:H used in the microcavity was grown both with and without ammonia (NH/sub 3/). For the Si rich a-SiNx:H grown without NH/sub 3/, the PL is in the red-near IR. For the N rich a-SiNx:H grown with NH/sub 3/, the PL is in the blue-green. In this paper, we report on the bright and spectrally pure PL of a-SiNx:H in a VCSEL structure microcavity.EnglishAmorphous materialsMirrorsPhotoluminescenceSemiconductor lasersDistributed bragg reflectorsVertical cavity surface emitting lasers (VCSEL)Optical materialsArticle10.1109/CLEO.1999.834546