Zhao, YuliangYang, GuowenZhao, YongmingTang, SongLan, YuLiu, YuxianWang, ZhenfuDemir, Abdullah2023-02-282023-02-282022-12-0119430655http://hdl.handle.net/11693/111867We report on studying tunnel junctions and an optical cavity structure for developing epitaxially-stacked high-efficiency 905 nm high-power laser diodes. The GaAs tunnel junctions were explored via simulations and experiments to realize a high peak current density of 7.7 × 104 A/cm2 and a low specific resistance of 1.5 × 10-5 Ωcm2 with a high n-doping concentration of 6 × 1019 cm-3. Employing a low-loss epitaxial structure design, single-, double-, and triple-cavity structure laser diodes demonstrated power scaling by epitaxial stacking. Triple-cavity laser diodes have a low optical loss (0.42 cm-1) and generate a peak power of 83 W with a short cavity length of 750 μm at a limited current of 30 A. © 2009-2012 IEEE.EnglishEpitaxial stackingHigh efficiencyLaser diodeLow optical lossN-doping concentrationPower scalingSpecific resistanceTunnel junctionArticle10.1109/JPHOT.2022.3211964