Lisesivdin, S. B.Tasli, P.Kasap, M.Ozturk, M.Arslan, E.Ozcelik, S.Özbay, Ekmel2016-02-082016-02-082010-05-080040-6090http://hdl.handle.net/11693/22265We present a carrier transport study on low indium content (0.064 ≤ x ≤ 0.140) InxAl1 - xN/AlN/GaN/AlN heterostructures. Experimental Hall data were carried out as a function of temperature (33-300 K) and a magnetic field (0-1.4 T). A two-dimensional electron gas (2DEG) with single or double subbands and a two-dimensional hole gas were extracted after implementing quantitative mobility spectrum analysis on the magnetic field dependent Hall data. The mobility of the lowest subband of 2DEG was found to be lower than the mobility of the second subband. This behavior is explained by way of interface related scattering mechanisms, and the results are supported with a one-dimensional self-consistent solution of non-linear Schrödinger- Poisson equations.EnglishHall effectIndium aluminum nitrideMetal organic chemical vapor depositionTwo dimensional electron gasMetallorganic chemical vapor depositionArticle10.1016/j.tsf.2010.04.120