Tekcan, B.Alkis, S.Alevli, M.Dietz, N.Ortac, B.Bıyıklı, NecmiOkyay, Ali Kemal2016-02-082016-02-0820140741-3106http://hdl.handle.net/11693/26395We present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs) are obtained through laser ablation of a high pressure chemical vapor deposition grown indium nitride thin film and are used as optically active absorption region. InN-NCs are sandwiched between thin insulating films to reduce the electrical leakage current. Under-1 V applied bias, the recorded photoresponsivity values within 600-1100-nm wavelength range are as high as (3.05 × 10-2) mA/W. An ultrathin layer of nanocrystalline InN thin film is, therefore, a promising candidate for NIR detection in large area schemes. © 2014 IEEE.Englishindium nitridenanocrystalsnear-infrared (NIR)PhotodetectorChemical vapor depositionLaser ablationNanocrystalsPhotodetectorsPhotonsThin filmsElectrical leakageHigh pressure chemical vapor depositionIndium nitrideNear infra redNear-infrared rangePhotoresponsivityThin insulating filmWavelength rangesInfrared devicesArticle10.1109/LED.2014.2336795