Yu, H.Strupinski, W.Butun, S.Özbay, Ekmel2016-02-082016-02-08200618626300http://hdl.handle.net/11693/23820The growth of high-performance Mg-doped p-type Al xGa 1-xN (x = 0.35) layers using low-pressure metal-organic chemical vapour deposition on an AlN/sapphire template is reported. The influence of growth conditions on the p-type conductivity of the Al xGa 1-xN (x = 0.35) alloy was investigated. It was found that the p-type resistivity of the AlGaN alloy demonstrates a marked dependence on the Mg concentration, V/III ratio and group III element flow rate. A minimum p-type resistivity of 3.5 Ω cm for Al xGa 1-xN (x = 0.35) epilayers was achieved. A Ni/Au (10 nm/100 nm) ohmic contact was also fabricated and a specific contact resistivity of 8.1 × 10 -2 Ω cm 2 was measured. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.EnglishP-type conductivityP-type resistivitySpecific contact resistivityElectric resistanceMagnesium printing platesMetallorganic chemical vapor depositionSapphireSemiconductor dopingSemiconducting aluminum compoundsArticle10.1002/pssa.200521461