Bütün, Bayram2016-01-082016-01-082010http://hdl.handle.net/11693/15320Cataloged from PDF version of article.Includes bibliographical references leaves 130-141.Recently in semiconductor market, III-Nitride materials and devices are of much interest due to their mechanical strength, radiation resistance, working in the spectrum from visible down to the deep ultraviolet region and solar-blind device applications. These properties made them strongest candidates for space telecommunication, white light generation, high power lasers and laser pumping light emitting diodes. Since, like other semiconductors, there have been material quality related issues, ongoing research efforts are concentrated on growing high quality crystals and making low p-type ohmic contact. Also, in light emitting device applications, similar to the visible and infrared spectrum components, there are challenging issues like high extraction efficiency and controlled radiation. In this thesis, we worked on growth and characterizations of high quality (In,Al)GaN based semiconductors, fabricating high performance photodiodes and light emitting diodes. We studied different surface modifications and possibilities of obtaining light emitting diode pumped organic/inorganic hybrid laser sourcesxvi, 141 leaves, illustrationsEnglishinfo:eu-repo/semantics/openAccessGaNAlGaNPhotodiodeLight Emitting DiodeLEDMetal-organic Chemical Vapor DepositonMOCVDPhotoluminescenceOrganic polymerMeLPPPTK7871.89.L53 B88 2010Light emitting diodes.Gallium nitride.Photonics.Photodiodes.Nanophotonics.Thesis