Yu, H.-Y.Park, J.-H.Okyay, Ali KemalSaraswat, K. C.2016-02-082016-02-082008-101938-5862http://hdl.handle.net/11693/26788Conference name: 214th ECS MeetingDate of Conference: 12- 17 October, 2008We demonstrate a promising approach for the monolithic integration of Ge-based nanoelectronics and nanophotonics with S-ilicon: the selective deposition of Ge on Si by Multiple Hydrogen Annealing for Heteroepitaxy (MHAH). Very high quality Ge layers can be selectively integrated on Si CMOS platform with this technique. We confirm the reduction of dislocation density in Ge layers using AFM surface morphology study. In addition, in situ doping of Ge layers is achieved and MOS capacitor structures are studied. ©The Electrochemical Society.EnglishAFMCapacitor structuresDefect reductionsDislocation densitiesHetero epitaxiesHigh qualitiesHydrogen annealingIn-situ dopingMonolithic integrationsSelective depositionsSelective epitaxiesSi CMOSEpitaxial growthHydrogenMonolithic integrated circuitsMOS capacitorsSemiconducting germanium compoundsSemiconducting silicon compoundsSiliconSilicon alloysGermaniumConference Paper10.1149/1.2986841