Gökkavas, M.Butun, S.Caban, P.Strupinski, W.Özbay, Ekmel2016-02-082016-02-082012-04-270268-1242http://hdl.handle.net/11693/21450Monolithically integrated quadruple back-illuminated ultraviolet metalsemiconductormetal photodetectors with four different spectral responsivity bands were demonstrated on each of two different Al xGa 1-xN heterostructures. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 18.15nm for sample A, which incorporated five 1000nm thick epitaxial layers. In comparison, the average FWHM for sample B was 9.98 nm, which incorporated nine 500nm thick epitaxial layers.EnglishAlGaNBack-illuminatedMonolithically integratedSpectral responsivityThick epitaxial layersUltra-violet photodetectorsEpitaxial growthMonolithic integrated circuitsPhotodetectorsArticle10.1088/0268-1242/27/6/065004