Bıyıklı, NecmiKimukin, İbrahimAytür, OrhanGökkavas, M.Ulu, G.Mirin, R.Christensen, D. H.Ünlü, M. S.Özbay, Ekmel2016-02-082016-02-0819981092-8081http://hdl.handle.net/11693/27654Date of Conference: 1-4 December 1998Conference Name: 11th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS 1998Widely-tunable high-speed resonant cavity enhanced p-i-n photodiodes were designed, fabricated and tested for operation around 820 nm. The structure was grown by solid-source MBE on GaAs substrates and features high-reflectivity Bragg mirrors made of quarter-wave Al0.20Ga0.80As/AlAs stacks. Photoresponse and photospectral measurements were carried out. The tuning of the resonance wavelength within the Bragg mirror's upper and lower edges was observed. Quantum efficiency greater than 90% was demonstrated.EnglishCavity resonatorsMolecular beam epitaxyOhmic contactsOptical waveguidesPhotocurrentsPhotodetectorsQuantum efficiencySemiconducting aluminum compoundsSemiconducting gallium arsenideSemiconductor device manufactureSemiconductor device structuresSemiconductor device testingBragg mirrorsResonant cavity enhanced (RCE) photodiodesPhotodiodesConference Paper10.1109/LEOS.1998.737779