Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H-SiC

Caban, P.Strupinski, W.Szmidt, J.Wojcik, M.Gaca, J.Kelekci, O.Caliskan, D.Özbay, Ekmel2016-02-082016-02-082010-09-250022-0248http://hdl.handle.net/11693/22052The influence of growth pressure on the coalescence thickness and the crystal quality of GaN deposited on 4HSiC by low pressure metalorganic vapor phase epitaxy was studied. It was shown that growth pressure has an impact on the surface roughness of epilayers and their crystal quality. GaN coalescence thicknesses were determined for the investigated growth pressures. The GaN layers were characterized by AFM and HRXRD measurements. HEMT structures were also fabricated and characterized. Among the growth pressures studied, 50, 125 and 200 mbar, 200 mbar was found to be most suitable for GaN/SiC epitaxy.EnglishA1. High resolution X-ray diffractionA3. Low pressure metalorganic vapor phase epitaxyB1. NitridesB3. High electron mobility transistorsA1. DefectsA1. NucleationB1. NitridesHigh resolution X-ray diffractionLow-pressure metalorganic vapor phase epitaxyCoalescenceDefectsDiffractionElectron mobilityEpitaxial growthGallium alloysGallium nitrideMetallorganic vapor phase epitaxyPressure effectsSilicon carbideSuperconducting filmsSurface roughnessVaporsEffect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H-SiCArticle10.1016/j.jcrysgro.2010.09.058