Yurchenko, V.Navruz, T.Çiydem, M.Altıntaş, Ayhan2020-02-132020-02-1320192119-0275http://hdl.handle.net/11693/53333We present a whispering-gallery-mode resonance-enhanced microwave-detected photoconductivity-decay method for contactless measurement of recombination lifetime in highresistivity semiconductor layers. We applied the method to undoped Silicon wafers of high resistivity at 5 and 30 kOhm*cm and measured the conductivity relaxation times of 10 and 14 microseconds, respectively. In wafers being considered, they are supposed to be defined by the electron-hole diffusion from the bulk to the wafer surfaces.EnglishSiliconRecombination lifetimePhotoconductivityPhotoconductivity-decay methodElectron-hole diffusionWhispering-gallery-modeMicrowave whispering-gallery-mode photoconductivity measurement of recombination lifetime in siliconArticle10.7716/aem.v8i2.1127