Genç, M.Sheremet, VolodymyrElçi, M.Kasapoğlu, A.Altuntaş, İ.Demir, İ.Eğin, G.İslamoğlu, SerkanGür, E.Muzafferoğlu, N.Elagöz, S.Gülseren, OğuzAydınlı, A.2020-02-122020-02-1220190749-6036http://hdl.handle.net/11693/53316This paper presents high performance, GaN/InGaN-based light emitting diodes (LEDs) in three different device configurations, namely Top Emitting (TE) LED, conventional Flip Chip (FC) and Distributed Contact (DC) FC. Series resistances as low as 1.1 Ω have been obtained from FC device configurations with a back reflecting ohmic contact of Ni/Au/RTA/Ni/Ag metal stack. A small shift has been observed between electroluminescence (EL) emissions of TE LED and the FC LEDs. In addition, FWHM value of the EL emission of DCFC LED has shown the minimum value of 160 meV (26.9 nm). Furthermore, DCFC LED configuration has shown the highest quantum efficiency and power output, with 330 mW at 500 mA current injection, compared to that of traditional wire bonded TE LEDs and the conventional FC LEDs.EnglishLight emitting diodesLuminescenceLED performanceCurrent distributionArticle10.1016/j.spmi.2019.01.008