Zafar, SalahuddinOsmanoğlu, SinanÇankaya, BüşraKashif, A.Özbay, Ekmel2020-01-242020-01-2420199782874870675http://hdl.handle.net/11693/52794Date of Conference: 13-15 May 2019Conference name:European Microwave Conference in Central Europe (EuMCE), Proceedings of the 1st European Microwave Conference in Central EuropeIn this paper, we report a broadband GaN HEMT LNA from 100 MHz to 2 GHz, using common source with inductive degeneration and RC feedback topology. Flat gain response of ±1.5 dB variation for 9 V drain voltage with 108 mA drain current bias is achieved. Noise characteristics for frequencies as low as 100 MHz have been explored for the first time for GaN-on-SiC technology. A gain greater than 8 dB with single stage, and promising values of input reflection coefficient (smaller than -8.9 dB) and output reflection coefficient (smaller than -7.1 dB) have been achieved, respectively. Minimum NF of 2.9 dB is achieved while an NF smaller than 5 dB is reported in the usable frequency range from 310 MHz to 2 GHz. Performance evaluation is also done for both low and high drain current and voltage values. In-house 0.15 μm GaN-on-SiC process is used to design this MMIC. The chip size for designed MMIC is 1.35 mm × 1.35 mm.EnglishBroadbandFlat gainLow-noise amplifierUHFL-bandGallium nitrideHEMTSiCConference Paper