Odabaşı, OğuzBütün, BayramÖzbay, Ekmel2020-01-242020-01-2420199782874870675http://hdl.handle.net/11693/52792Date of Conference: 13-15 May 2019Conference name: European Microwave Conference in Central Europe (EuMCE), Proceedings of the 1st European Microwave Conference in Central EuropeIn this work, the realistic channel temperature of AlGaN/GaN High Electron Mobility Transistors (HEMTs) is investigated by using 2D electrothermal and Finite Element Method (FEM) thermal simulations. By using a special method to map the position dependent heating in a device, more accurate results in channel temperature are achieved compared to the conventional FEM methods. With this method, larger device areas can be simulated more accurately with less complexity.EnglishAlGaN/GaNHigh-Electron-Mobility-Transistors (HEMT)ReliabilitySemiconductor device thermal factorsConference Paper