Kumar, M.Noh, Y.Polat, K.Okyay, Ali KemalLee, D.2016-02-082016-02-0820150038-1098http://hdl.handle.net/11693/26308Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) based on Ga doped ZnO (ZnO:Ga)/graphene is presented in this work. A low dark current of 8.68 nA was demonstrated at a bias of 1 V and a large photo to dark contrast ratio of more than four orders of magnitude was observed. MSM PD exhibited a room temperature responsivity of 48.37 A/W at wavelength of 350 nm and UV-to-visible rejection ratio of about three orders of magnitude. A large photo-to-dark contrast and UV-to-visible rejection ratio suggests the enhancement in the PD performance which is attributed to the existence of a surface plasmon effect at the interface of the ZnO:Ga and underlying graphene layer.EnglishA. Ga doped ZnOA. GrapheneC. Metal-semiconductor-metalD. Surface plasmonPhotodetectorsPhotonsPlasmonsZinc oxideFabrication and characterizationsMetal-semiconductor-metal uv photodetectorsSurface plasmon effectsSurface plasmonsTemperature responsivityThree orders of magnitudeMetalsArticle10.1016/j.ssc.2015.10.007