Gülseren, Melisa EkinBozok, BerkayKurt, GökhanKayal, Ömer AhmetÖztürk, MustafaUral, SertaçBütün, BayramÖzbay, Ekmel2020-01-302020-01-302019-020277-786Xhttp://hdl.handle.net/11693/52938Date of Conference: 2-7 February 2019Conference name: SPIE OPTO, 2019A normally-off InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a p-GaN gate is reported. Devices are fabricated on two different epitaxial structures, one containing a high resistive GaN buffer layer and one containing an AlGaN back-barrier, and the threshold voltage, drain current density, and buffer leakage current are compared. With the epitaxial structure containing a high resistive GaN layer, normally-off operation with a threshold voltage of +0.5 V is achieved. The threshold voltage is further increased to +2 V with the AlGaN back-barrier, and the buffer leakage current was improved by over an order of magnitude.EnglishBack-barrierHigh-electron-mobility transistors (HEMTs)InAlN, normally-offp-GaN gateBuffer leakageGaNConference Paper10.1117/12.2507398