El-Atab, N.Rizk, A.Tekcan, B.Alkis, S.Okyay, Ali KemalNayfeh, A.2016-02-082016-02-0820151862-6300http://hdl.handle.net/11693/21358A memory structure containing ultra-small 2-nm laser-synthesized silicon nanoparticles is demonstrated. The Si-nanoparticles are embedded between an atomic layer deposited high-κ dielectric Al<inf>2</inf>O<inf>3</inf> layer and a sputtered SiO<inf>2</inf> layer. A memory effect due to charging of the Si nanoparticles is observed using high frequency C-V measurements. The shift of the threshold voltage obtained from the hysteresis measurements is around 3.3V at 10/-10V gate voltage sweeping. The analysis of the energy band diagram of the memory structure and the negative shift of the programmed C-V curve indicate that holes are tunneling from p-type Si via Fowler-Nordheim tunneling and are being trapped in the Si nanoparticles. In addition, the structures show good endurance characteristic (>105program/erase cycles) and long retention time (>10 years), which make them promising for applications in non-volatile memory devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.EnglishAluminumApplication programsAtomic layer depositionC (programming language)Charge trappingData storage equipmentDigital storageFlash memoryMetal nanoparticlesMOS devicesNanoparticlesSemiconducting siliconSemiconductor lasersSiliconSilicon oxidesSynthesis (chemical)Threshold voltageAtomic layer depositedCharge trapping memoryHysteresis measurementsLaser processMetal Oxide Semiconductor structureNonvolatile memory devicesSilicon nanoparticlesSynthesized solutionCrystal atomic structureArticle10.1002/pssa.201431802