Bıyıklı, NecmiOzgit-Akgun, ÇağlaGoldenberg, EdaHaider, AliKızır, SedaUyar, TamerBolat, SamiTekcan, BurakOkyay, Ali Kemal2016-02-082016-02-082015http://hdl.handle.net/11693/28374Date of Conference: 21-24 April 2015Hollow cathode plasma-assisted atomic layer deposition is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our efforts on the development of HCPA-ALD processes for III-nitrides together with the properties of resulting thin films and nanostructures. The content will further include nylon 6,6/GaN core/shell and BN/AlN bishell hollow nanofibers, proof-of-concept thin film transistors and UV photodetectors fabricated using HCPA-ALD-grown GaN layers, as well as early results for InN thin films deposited by HCPA-ALD technique. © 2015 IEEE.EnglishAtomic layer depositionAtomsCathodesDepositionElectrodesElectron sourcesLow temperature effectsNanofibersNanostructuresNanotechnologyNitridesPhotodetectorsPhotonsPulsed laser depositionTemperatureThin film transistorsHollow cathodesHollow nanofibersIII-NitrideLow impurity concentrationsLow temperature synthesisLow temperaturesProof of conceptUV photodetectorsThin filmsConference Paper10.1109/ELNANO.2015.7146876