Özbay, EkmelKimukin, I.Bıyıklı, N.Aytür, O.Gökkavas, M.Ulu, G.Ünlü, M. S.Mirin, R. P.Bertness, K. A.Christensen, D. H.Towe, E.Tuttle, G.2016-02-082016-02-0819990277-786Xhttp://hdl.handle.net/11693/25290In this paper, we review our research efforts on RCE high-speed high-efficiency p-i-n and Schottky photodiodes. Using a microwave compatible planar fabrication process, we have designed and fabricated GaAs based RCE photodiodes. For RCE Schottky photodiodes, we have achieved a peak quantum efficiency of 50% along with a 3-dB bandwidth of 100 GHz. The tunability of the detectors via a recess etch is also demonstrated. For p-i-n type photodiodes, we have fabricated and tested widely tunable devices with near 100% quantum efficiencies, along with a 3-dB bandwidth of 50 GHz. Both of these results correspond to the fastest RCE photodetectors published in scientific literature.EnglishHigh speed photodetectorsResonant cavity enhancementSchottky diodeP-i-n photodiodQuantum efficiencArticle10.1117/12.344566