Oruc, F. B.Cimen, F.Rizk, A.Ghaffari, M.Nayfeh, A.Okyay, Ali Kemal2016-02-082016-02-082012-10-260741-3106http://hdl.handle.net/11693/21253A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first time. The extracted mobility and subthreshold slope of the thin-film device are 23 cm2/V · s and 720 mV/dec, respectively. The memory effect is verified by a 2.35-V hysteresis in the $I\rm drain- $V\rm gate curve. Physics-based TCAD simulations show very good agreement with the experimental results providing insight to the charge-trapping physics.EnglishAtomic layer deposition (ALD)Flash memoryThin-film transistor (TFT)ZnOChannel materialsCharge trapping memoriesGate stacksMemory cellMemory effectsPhysics-basedSubthreshold slopeTCAD simulationThin-film transistor (TFTs)ZnOAtomic layer depositionFlash memorySemiconductor storageThin film devicesZinc oxideThin film transistorsArticle10.1109/LED.2012.2219493