Gökkavas, M.Onat, B. M.Özbay, EkmelAta, E. P.Xu, J.Towe, E.Ünlü, M. S.2015-07-282015-07-281999-020018-9197http://hdl.handle.net/11693/11115Resonant cavity enhanced (RCE) photodiodes (PD's) are promising candidates for applications in optical communications and interconnects where high-speed high-efficiency photodetection is desirable. In RCE structures, the electrical properties of the photodetector remain mostly unchanged; however, the presence of the microcavity causes wavelength selectivity accompanied by a drastic increase of the optical field at the resonant wavelengths. The enhanced optical field allows to maintain a high efficiency for faster transit-time limited PD's with thinner absorption regions. The combination of an RCE detection scheme with Schottky PD's allows for the fabrication of high-performance photodetectors with relatively simple material structures and fabrication processes. In top-illuminated RCE Schottky PD's, a semitransparent Schottky contact can also serve as the top reflector of the resonant cavity. We present theoretical and experimental results on spectral and high-speed properties of GaAs-AlAs-InGaAs RCE Schottky PD's designed for 900-nm wavelength.EnglishHigh-speed optoelectronicsPhotodetectorsPhotodiodesSchottky diodesResonant cavityArticle10.1109/3.740742