Zhang Z.-H.Ji Y.Liu W.Tan S.T.Kyaw, Z.Ju, Z.Zhang X.Hasanov N.Lu S.Zhang, Y.Zhu B.Sun, X. W.Demir, Hilmi Volkan2015-07-282015-07-2820140003-6951http://hdl.handle.net/11693/12813In this work, the origin of electron blocking effect of n-type Al 0.25Ga0.75N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes. © 2014 AIP Publishing LLC.EnglishElectric FieldsLight Emitting DiodesSemiconductor Quantum WellsArticle10.1063/1.4866041