Karatum, O.Aria, M. M.Eren, G. Ö.Yıldız, E.Melikov, R.Srivastava, S. B.Sürme, S.Bakış Doğru, I.Jalali, H. B.Ulgut, BurakŞahin, A.Kavaklı, İ. H.Nizamoğlu, S.2022-02-152022-02-152021-06-23http://hdl.handle.net/11693/77381Light-activated biointerfaces provide a non-genetic route for effective control of neural activity. InP quantum dots (QDs) have a high potential for such biomedical applications due to their uniquely tunable electronic properties, photostability, toxic-heavy-metal-free content, heterostructuring, and solution-processing ability. However, the effect of QD nanostructure and biointerface architecture on the photoelectrical cellular interfacing remained unexplored. Here, we unravel the control of the photoelectrical response of InP QD-based biointerfaces via nanoengineering from QD to device-level. At QD level, thin ZnS shell growth (∼0.65 nm) enhances the current level of biointerfaces over an order of magnitude with respect to only InP core QDs. At device-level, band alignment engineering allows for the bidirectional photoelectrochemical current generation, which enables light-induced temporally precise and rapidly reversible action potential generation and hyperpolarization on primary hippocampal neurons. Our findings show that nanoengineering QD-based biointerfaces hold great promise for next-generation neurostimulation devices.EnglishBiointerfaceNeuromodulationPhotostimulationQuantum dotIndium phosphideNanocrystalNeural interfaceNanoengineeringArticle10.3389/fnins.2021.6526081662-453X