Kimukin, I.Bıyıklı, NecmiButun, B.Aytur, O.Ünlü, S. M.Özbay, Ekmel2015-07-282015-07-282002-031041-1135http://hdl.handle.net/11693/11201In this letter, we have designed, fabricated, and characterized high-speed and high efficiency InGaAs-based p-i-n photodetectors with a resonant cavity enhanced structure. The devices were fabricated by a microwave-compatible process. By using a postprocess recess etch, we tuned the resonance wavelength from 1605 to 1558 nm while keeping the peak efficiencies above 60%. The maximum quantum efficiency was 66% at 1572 nm which was in good agreement with our theoretical calculations. The photodiode had a linear response up to 6-mW optical power, where we obtained 5-mA photocurrent at 3-V reverse bias. The photodetector had a temporal response of 16 ps at 7-V bias. After system response deconvolution, the 3-dB bandwidth of the device was 31 GHz, which corresponds to a bandwidth-efficiency product of 20 GHz.EnglishBandwidth-efficiencyHigh SpeedP-i-n PhotodiodePhotodetectorResonant Cavity EnhancedDeconvolutionBandwidthCavity ResonatorsMicrowavesPhotocurrentsQuantum EfficiencySemiconducting Indium Gallium ArsenidePhotodiodesArticle10.1109/68.986815