Perumal, A.Shendre, S.Li, M.Tay, Y. K. E.Sharma, V. K.Chen, S.Wei, Z.Liu, Q.Gao, Y.Buenconsejo, P. J. S.Tan S.T.Gan, C. L.Xiong, Q.Sum, T. C.Demir, Hilmi Volkan2018-04-122018-04-1220162045-2322http://hdl.handle.net/11693/36695Formamidinium lead halide (FAPbX3) has attracted greater attention and is more prominent recently in photovoltaic devices due to its broad absorption and higher thermal stability in comparison to more popular methylammonium lead halide MAPbX3. Herein, a simple and highly reproducible room temperature synthesis of device grade high quality formamidinium lead bromide CH(NH2)2 PbBr3 (FAPbBr3) colloidal nanocrystals (NC) having high photoluminescence quantum efficiency (PLQE) of 55-65% is reported. In addition, we demonstrate high brightness perovskite light emitting device (Pe-LED) with these FAPbBr3 perovskite NC thin film using 2,2′,2″-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) commonly known as TPBi and 4,6-Bis(3,5-di(pyridin-3-yl)phenyl)-2-methylpyrimidine (B3PYMPM) as electron transport layers (ETL). The Pe-LED device with B3PYMPM as ETL has bright electroluminescence of up to 2714 cd/m2, while the Pe-LED device with TPBi as ETL has higher peak luminous efficiency of 6.4 cd/A and peak luminous power efficiency of 5.7 lm/W. To our knowledge this is the first report on high brightness light emitting device based on CH(NH2)2 PbBr3 widely known as FAPbBr3 nanocrystals in literature. © The Author(s) 2016.EnglishHigh brightness formamidinium lead bromide perovskite nanocrystal light emitting devicesArticle10.1038/srep36733